发明授权
- 专利标题： Cleaning carbon contamination on mask using gaseous phase
- 专利标题（中）： 使用气相清洁面罩上的碳污染
-
申请号： US09495165申请日： 2000-01-31
-
公开(公告)号： US06423479B1公开(公告)日： 2002-07-23
- 发明人: Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
- 申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Sanjay K. Yedur , Bryan K. Choo
- 主分类号： G03F726
- IPC分类号： G03F726
摘要：
In one embodiment, the present invention relates to a method of processing a lithography mask, involving the steps of exposing a lithography substrate with actinic radiation through the lithography mask in a chamber; removing the lithography mask from the chamber, wherein the lithography mask contains carbon contaminants; and contacting the lithography mask with sulfur trioxide thereby reducing the carbon contaminants thereon.
信息查询
