发明授权
US06423797B1 Anti-reflective coating polymers from p-tosylmethylacrylamide and preparation method
有权
来自对甲苯基甲基丙烯酰胺的抗反射涂层聚合物及其制备方法
- 专利标题: Anti-reflective coating polymers from p-tosylmethylacrylamide and preparation method
- 专利标题(中): 来自对甲苯基甲基丙烯酰胺的抗反射涂层聚合物及其制备方法
-
申请号: US09603561申请日: 2000-06-23
-
公开(公告)号: US06423797B1公开(公告)日: 2002-07-23
- 发明人: Sung-Eun Hong , Min-Ho Jung , Ki-Ho Baik
- 申请人: Sung-Eun Hong , Min-Ho Jung , Ki-Ho Baik
- 优先权: KR99-24470 19990626
- 主分类号: C08F206
- IPC分类号: C08F206
摘要:
The present invention relates to organic anti-reflective coating polymers suitable for use in manufacturing a semiconductor device using a photolithography process for forming ultrafine-patterns with a 193 nm ArF beam, and preparation methods therefor. Anti-reflective coating polymers of the present invention contain a monomer having a phenyl group and amide linkage with high light absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine-patterns, the polymers eliminate the standing waves caused by changes in the thickness of the photoresist layer, by the spectroscopic property of the lower layers of the semiconductor wafer and by changes in CD due to diffractive and reflective light originating from the lower layer, thereby resulting in the stable formation of ultrafine-patters suitable for 64 M, 256 M, 1 G, 4 G and 16 G DRAM semiconductor devices and a great improvement in the production yield. The present invention also relates to anti-reflective compositions containing these polymers, anti-reflective coatings formed from these compositions and semiconductor devices containing these anti-reflective coatings, as well as preparation methods therefor.
信息查询