发明授权
- 专利标题: Semiconductor device having a tantalum oxide blocking film
- 专利标题(中): 具有氧化钽阻挡膜的半导体器件
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申请号: US09550829申请日: 2000-04-18
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公开(公告)号: US06424012B1公开(公告)日: 2002-07-23
- 发明人: Ritsuko Kawasaki , Hiroki Adachi , Kazuhide Tomiyasu , Hiroyuki Ogawa
- 申请人: Ritsuko Kawasaki , Hiroki Adachi , Kazuhide Tomiyasu , Hiroyuki Ogawa
- 优先权: JP11-111605 19990420
- 主分类号: H01L2701
- IPC分类号: H01L2701
摘要:
In a semiconductor device employing a glass substrate, the object of the present invention is to provide a high performance semiconductor device with a large screen at low cost, which prevents the semiconductor device from being contaminated by impurities from the glass substrate. In a semiconductor device comprising a blocking film provided in contact with a glass substrate and TFTs provided on the blocking film, the blocking film is characterized by being made of a tantalum oxide film.
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