Within both a microelectronic conductor structure and a method for forming the microelectronic conductor structure there is employed a silicon carbide layer having formed thereupon a silicon nitride layer in turn having formed thereupon a patterned low dielectric constant dielectric layer in turn having formed interposed between its patterns a patterned conductor layer. Within both the microelectronic conductor structure and the method for forming the microelectronic conductor structure, by employing the silicon carbide layer having formed thereupon the silicon nitride layer in turn having formed thereupon the patterned low dielectric constant dielectric layer, the microelectronic conductor structure is formed with enhanced adhesion and attenuated electrical leakage.