发明授权
US06424046B1 Substrate for manufacturing a semiconductor device with three element alloy
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用于制造具有三元素合金的半导体器件的基板
- 专利标题： Substrate for manufacturing a semiconductor device with three element alloy
- 专利标题（中）： 用于制造具有三元素合金的半导体器件的基板
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申请号： US09934793申请日： 2001-08-22
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公开(公告)号： US06424046B1公开(公告)日： 2002-07-23
- 发明人: Soon Sung Hong , Ji Yong Lee , Byung Jun Park
- 申请人： Soon Sung Hong , Ji Yong Lee , Byung Jun Park
- 优先权： KR2000-0048799 20000823
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
The substrate according to the present invention is comprised of a silver/gold/grain element alloy layer, wherein the alloy forms an outside layer of the product. The grain element is selected from a group consisting of selenium, antimony, bismuth, nickel, cobalt, indium and combination thereof. The present invention has a particular application in forming the outside layer of various items, including a lead frame, a ball grid array, a header, a printed circuit board, a reed switch and a connector.