发明授权
- 专利标题: Method for preparing transparent conductive thin film by rapid thermal annealing method
- 专利标题(中): 通过快速热退火法制备透明导电薄膜的方法
-
申请号: US09574125申请日: 2000-05-19
-
公开(公告)号: US06436469B1公开(公告)日: 2002-08-20
- 发明人: Hyun-Gon Lee , Eu-Gene Kim , Jung-Hyun Oh , Sang-Soo Oh , Jun-Beom Kim
- 申请人: Hyun-Gon Lee , Eu-Gene Kim , Jung-Hyun Oh , Sang-Soo Oh , Jun-Beom Kim
- 优先权: KR99-63797 19991228
- 主分类号: B05D506
- IPC分类号: B05D506
摘要:
The present invention relates to a transparent conductive thin film and a method for the preparation of the same., and more particularly to a method for the preparation of a transparent conductive thin film comprising the steps of a) preparing a sol solution of antimony-tin oxides (ATO) or indium-tin oxides (ITO), b) forming a transparent coating layer on an outer surface of a cathode ray tube using the sol solution, and c) rapidly increasing a temperature of the transparent coating layer to a predetermined temperature of 300 to 1200° C., and rapidly cooling the transparent coating layer either immediately or after maintaining the predetermined temperature for up to 20 seconds, and a transparent conductive thin film prepared by this preparation method, i.e., a transparent conductive thin film which not only has superior conductivity, high hardness, and non-reflectivity but also saves production process time and increases production process effectiveness, and a method for the preparation of the same.
公开/授权文献
信息查询