发明授权
- 专利标题: Method for reducing surface oxide in polysilicon processing
- 专利标题(中): 多晶硅加工中减少表面氧化物的方法
-
申请号: US09838418申请日: 2001-04-19
-
公开(公告)号: US06436760B1公开(公告)日: 2002-08-20
- 发明人: Kwong H. Wong , Ashima B. Chakravarti , Satya N. Chakravarti , Subramanian S. Iyer
- 申请人: Kwong H. Wong , Ashima B. Chakravarti , Satya N. Chakravarti , Subramanian S. Iyer
- 主分类号: H01L218242
- IPC分类号: H01L218242
摘要:
A method for removing surface oxide from polysilicon includes depositing a very thin layer of germanium (e.g. monolayers in thickness) over the polysilicon immediately before a subsequent polysilicon deposition step, and then heating the germanium-coated polysilicon in a vacuum to sublime (remove) volatile germanium oxide. This method is applied to formation of a trench capacitor, which uses either doped amorphous silicon or doped amorphous SiGe material in the formation of the electrodes.