发明授权
- 专利标题: Method and structure for a semiconductor fuse
- 专利标题(中): 半导体保险丝的方法和结构
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申请号: US09827871申请日: 2001-04-06
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公开(公告)号: US06440834B2公开(公告)日: 2002-08-27
- 发明人: Timothy Harrison Daubenspeck , William Thomas Motsiff , Jed Hickory Rankin
- 申请人: Timothy Harrison Daubenspeck , William Thomas Motsiff , Jed Hickory Rankin
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
A semiconductor fuse structure having a conductive fuse material abutting a first and second conductive line is provided. The fuse of the present invention does not substantially damage the surrounding semiconductor material therefore it can be used with a wide variety of materials including porous, mechanically fragile, low dielectric constant materials and high conductive metals like Cu. Methods of fabricating such a semiconductor fuse structure are also provided herein.
公开/授权文献
- US20010014509A1 Method and structure for a semiconductor fuse 公开/授权日:2001-08-16
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