发明授权
US06442068B1 Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration
有权
在电气变更操作暂停期间读取突发模式读取和页面模式的功能性能的非易失性存储器
- 专利标题： Non-volatile memory with functional capability of burst mode read and page mode read during suspension of an operation of electrical alteration
- 专利标题（中）： 在电气变更操作暂停期间读取突发模式读取和页面模式的功能性能的非易失性存储器
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申请号： US09619589申请日： 2000-07-19
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公开(公告)号： US06442068B1公开(公告)日： 2002-08-27
- 发明人: Simone Bartoli , Lorenzo Bedarida , Mauro Sali , Antonio Russo
- 申请人： Simone Bartoli , Lorenzo Bedarida , Mauro Sali , Antonio Russo
- 主分类号： G11C1134
- IPC分类号： G11C1134
摘要：
An electrically alterable semiconductor memory includes at least two memory sectors the content of which is individually alterable, and a control circuit for controlling operations of electrical alteration of the content of the memory, permitting the selective execution of an operation of electrical alteration of the content of one of the memory sectors with the possibility of suspending the execution to permit read access to the other of the memory sectors. The control circuit is also capable of permitting, during the suspension, an operation of burst mode or page mode reading of the content of the other memory sector.
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