发明授权
- 专利标题: Thin-film forming method and thin-film forming apparatus
- 专利标题(中): 薄膜形成方法和薄膜形成装置
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申请号: US09463004申请日: 2000-04-05
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公开(公告)号: US06447652B1公开(公告)日: 2002-09-10
- 发明人: Shunji Amano , Hiroshi Hayashi , Ryoichi Hiratsuka
- 申请人: Shunji Amano , Hiroshi Hayashi , Ryoichi Hiratsuka
- 优先权: JP10-132149 19980514
- 主分类号: C23C1434
- IPC分类号: C23C1434
摘要:
A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).
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