发明授权
- 专利标题: Measure fluorescence from chemical released during trim etch
- 专利标题(中): 测量在修剪蚀刻期间释放的化学物质的荧光
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申请号: US09911236申请日: 2001-07-23
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公开(公告)号: US06448097B1公开(公告)日: 2002-09-10
- 发明人: Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
- 申请人: Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
- 主分类号: H01L3126
- IPC分类号: H01L3126
摘要:
A system and method is provided for determining and controlling development of a semiconductor substrate employing fluorescence spectroscopy. One aspect of the invention relates to a system and method employing fluorescence spectroscopy to facilitate control of a chemical trim etch process during development of a photoresist material layer. The chemical trim etch process comprises applying a trim compound or material to a patterned photoresist. The trim compound or material is diffusable into the sides and top of the patterned resist. The diffused regions of the resist are soluble in a developer, which facilitates creating smaller features in the patterned photoresist. The fluorescence spectroscopy system can be employed to measure isolated and dense gratings or CDs and use the evolution of the CD to determine when to terminate the chemical trim process.
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