发明授权
- 专利标题: Method of measuring negative ion density of plasma and plasma processing method and apparatus for carrying out the same
- 专利标题(中): 测量等离子体的负离子密度和等离子体处理方法及其执行方法
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申请号: US09597654申请日: 2000-06-19
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公开(公告)号: US06452400B1公开(公告)日: 2002-09-17
- 发明人: Yoshinobu Kawai , Yoko Ueda , Nobuo Ishii , Satoru Kawakami
- 申请人: Yoshinobu Kawai , Yoko Ueda , Nobuo Ishii , Satoru Kawakami
- 优先权: JP10-316859 19981020
- 主分类号: G01N2762
- IPC分类号: G01N2762
摘要:
A probe (6) is brought into contact with a plasma produced by ionizing Ar gas, a saturation current (Ies2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is higher than a ground potential, and a saturation current (Iis2) at which current flowing through the probe is saturated when the potential of the probe is changed in a potential region where the potential of the probe is lower than the ground potential. Similarly, saturation currents (Ies2, Iis2) are measured by bringing the probe (6) into contact with a plasma produced by ionizing a mixed gas containing Ar gas and a process gas, such as C4F8 gas, and changing the potential of the probe (6). The negative ion density of the plasma produced by ionizing C4F8 gas is determined by using saturation current ratios (Iis1/Iis2, Ies1/Ies2).
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