发明授权
- 专利标题: Method for preventing a by-product ion moving from a spacer
- 专利标题(中): 防止副产物离子从间隔物移动的方法
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申请号: US09872261申请日: 2001-06-01
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公开(公告)号: US06455389B1公开(公告)日: 2002-09-24
- 发明人: Kuo-Tai Huang , Chao-Sheng Lin , Li-Wei Cheng
- 申请人: Kuo-Tai Huang , Chao-Sheng Lin , Li-Wei Cheng
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
This invention relates to a method that prevents by-productions from moving from a spacer. In particular by using an offset liner, a liner with a treated surface and a spacer that is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. The present invention uses a liner, whose surface is treated, and a spacer, which is formed by using the atomic layer deposition method or the rapid thermal chemical vapor deposition method. This prevents by-product ions from moving from the spacer to other regions by using actions in diffusion and drift to affect the voltage stability of the semiconductor device after the current is connected. This defect will further affect qualities of the semiconductor device.