发明授权
- 专利标题： Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer
- 专利标题（中）： 使用双层碳掺杂氮化硅/碳掺杂氧化硅蚀刻停止层形成镶嵌结构的方法
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申请号： US09899419申请日： 2001-07-05
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公开(公告)号： US06455417B1公开(公告)日： 2002-09-24
- 发明人: Tien-I Bao , Syun-Ming Jang
- 申请人： Tien-I Bao , Syun-Ming Jang
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
Within a damascene method for forming a microelectronic fabrication, there is employed a first etch stop/liner layer formed upon a substrate, wherein the first etch stop/liner layer comprises a first layer formed upon the substrate and formed of a carbon doped silicon nitride material and a second layer formed upon the first layer and formed of a carbon doped silicon oxide material. The first etch stop/liner layer formed in accord with the above materials selections provides for attenuated oxidation of the substrate and attenuated residue formation of a photoresist layer coated, photo exposed and developed in contact with the first etch stop/liner layer.