Invention Grant
- Patent Title: Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating
- Patent Title (中): 用于制造导电涂层中产生热应力的半导体器件的方法
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Application No.: US09389515Application Date: 1999-09-03
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Publication No.: US06458703B2Publication Date: 2002-10-01
- Inventor: Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
- Applicant: Mamoru Endo , Junichi Takeuchi , Michio Asahina , Eiji Suzuki , Kazuki Matsumoto
- Priority: JP10-251563 19980904; JP10-374109 19981228
- Main IPC: H01L2144
- IPC: H01L2144
Abstract:
A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
Public/Granted literature
- US20010041440A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2001-11-15
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