发明授权
- 专利标题： Shadow mask, a method of forming the shadow mask, and a method of manufacturing a semiconductor device with using the shadow mask
- 专利标题（中）： 阴影掩模，形成荫罩的方法以及使用荫罩制造半导体器件的方法
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申请号： US09422191申请日： 1999-10-21
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公开(公告)号： US06459193B1公开(公告)日： 2002-10-01
- 发明人: Shinichi Fukuzawa , Shigeyoshi Ootsuki
- 申请人： Shinichi Fukuzawa , Shigeyoshi Ootsuki
- 优先权： JP10-301844 19981023
- 主分类号： H01J2980
- IPC分类号： H01J2980
摘要：
A shadow mask is applicable to forming a minute film on a substrate by evaporation or the like. The shadow mask comprises a support film, a stopper film, a polyimide film and a thin plate. The support film has enough mechanical strength necessary for forming predetermined sized holes. The stopper film is formed on the support film and is used as an etching stopper while forming the holes in the support film. The polyimide film is formed on the stopper film and bonds the stopper film to the thin plate. The thin plate is formed on the polyimide film and is made of a material which is the same as that of the substrate on which the film is formed or a material whose thermal expansion rate is substantially the same as that of the substrate. Openings of the shadow mask are formed at predetermined regions through the support film, the stopper film, the polyimide film and the thin plate. Each of the openings has a tapered portion and a projected portion. The tapered portion is formed through the support film, the stopper film, the polyimide film and a part of the thin plate, and is broadened to the support film. The projected portion is a part of the thin plate projecting toward the center of the tapered portion. During the step of forming a film on the substrate, the shadow mask is arranged so that the thin plate faces the substrate.