发明授权
- 专利标题: Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device
- 专利标题(中): 半导体装置用清洗剂及半导体装置的制造方法
-
申请号: US08369215申请日: 1995-01-05
-
公开(公告)号: US06462005B1公开(公告)日: 2002-10-08
- 发明人: Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
- 申请人: Hideto Gotoh , Tetsuo Aoyama , Rieko Nakano , Hideki Fukuda
- 优先权: JP6-000520 19940107
- 主分类号: C11D162
- IPC分类号: C11D162
摘要:
A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.