发明授权
US06462574B1 Burn-in system, burn-in control technique, and semiconductor device production method using said system and technique 有权
老化系统,老化控制技术和使用该系统和技术的半导体器件制造方法

  • 专利标题: Burn-in system, burn-in control technique, and semiconductor device production method using said system and technique
  • 专利标题(中): 老化系统,老化控制技术和使用该系统和技术的半导体器件制造方法
  • 申请号: US09506075
    申请日: 2000-02-16
  • 公开(公告)号: US06462574B1
    公开(公告)日: 2002-10-08
  • 发明人: Hitoshi IzuruHiroyuki YoshiokaToshiaki Tominaga
  • 申请人: Hitoshi IzuruHiroyuki YoshiokaToshiaki Tominaga
  • 优先权: JP11-200213 19990714
  • 主分类号: G01R3102
  • IPC分类号: G01R3102
Burn-in system, burn-in control technique, and semiconductor device production method using said system and technique
摘要:
A burn-in system, a burn-in control technique, and a semiconductor device production method utilizing the burn-in control technique are provided. The burn-in system of the present invention comprises a plurality of burn-in devices and an independent counter terminal. Each of the burn-in devices calculates a parameter indicating the number of mounted semiconductor devices, and generates measurement data indicating quality of the individual semiconductor devices collectively subjected to a burn-in test. The counter terminal adds up the parameters and measurement data sent from the burn-in devices. The counter terminal then calculates a failure rate based on the total parameter and the measurement data, and stops the burn-in test of each of the burn-in devices when the failure rate reaches a predetermined reference value.
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