发明授权
- 专利标题： CMOS structure having dynamic threshold voltage
- 专利标题（中）： CMOS结构具有动态阈值电压
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申请号： US10072318申请日： 2002-02-07
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公开(公告)号： US06465849B1公开(公告)日： 2002-10-15
- 发明人: Yao-Wen Chang , Tao-Cheng Lu
- 申请人： Yao-Wen Chang , Tao-Cheng Lu
- 优先权： TW90133087A 20011231
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A CMOS structure having a dynamic threshold voltage comprising of a MOS transistor, a first diode and a second diode. A first terminal of the first diode is coupled to the gate terminal of the MOS transistor and a second terminal of the first diode is coupled to the substrate of the MOS transistor. The first terminal of the second diode is coupled to a bulk voltage terminal and a second terminal of the second diode is coupled to the substrate of the MOS transistor.
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