CMOS-type solid state imaging device that prevents charge inflow into optical black

发明授权

US06465859B1 CMOS-type solid state imaging device that prevents charge inflow into optical black 有权

标题翻译： CMOS型固态成像装置，防止电荷流入光学黑色

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专利标题： CMOS-type solid state imaging device that prevents charge inflow into optical black
专利标题（中）： CMOS型固态成像装置，防止电荷流入光学黑色
申请号： US09963410

申请日： 2001-09-27
公开(公告)号： US06465859B1

公开(公告)日： 2002-10-15
发明人: Koji Fujiwara , Iwao Sugiyama , Toshitaka Mizuguchi
申请人： Koji Fujiwara , Iwao Sugiyama , Toshitaka Mizuguchi
优先权： JP2001-130216 20010426
主分类号： H01L310232
IPC分类号： H01L310232

CMOS-type solid state imaging device that prevents charge inflow into optical black

摘要：

A solid state imaging device includes a semiconductor substrate, a light receiving section which is provided in a surface of the semiconductor substrate, and includes an array of pixels that accumulate electric charge through photoelectric conversion of incoming light, a light shielding section which includes an array of pixels formed in the surface of the semiconductor substrate and shielded from light, and a drain which is situated between the light receiving section and the light shielding section, and is formed to a depth deeper in the semiconductor substrate than the light receiving section and the light shielding section.

摘要（中）：

固态成像装置包括半导体基板，设置在半导体基板的表面中的受光部，并且包括通过光的入射光积累电荷的像素阵列，包括阵列的光屏蔽部形成在半导体衬底的表面中并被遮光的像素，以及位于光接收部分和遮光部分之间的漏极，并且形成为比光接收部分更深地在半导体衬底中深度遮光部分。

公开/授权文献

US20020158294A1 CMOS-TYPE SOLID STATE IMAGING DEVICE THAT PREVENTS CHARGE INFLOW INTO OPTICAL BLACK 公开/授权日：2002-10-31

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