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US06465864B2 Diode structure on MOS wafer 失效
MOS晶圆上的二极管结构

  • Patent Title: Diode structure on MOS wafer
  • Patent Title (中): MOS晶圆上的二极管结构
  • Application No.: US09793945
    Application Date: 2001-02-27
  • Publication No.: US06465864B2
    Publication Date: 2002-10-15
  • Inventor: Te-Wei Chen , Jia Jio Huang
  • Applicant: Te-Wei Chen , Jia Jio Huang
  • Priority: TW090103093A 20010213
  • Main IPC: H01L2900
  • IPC: H01L2900
Diode structure on MOS wafer
Abstract:
Three diode structures on a metal-oxide-semiconductor (MOS) wafer. Each diode structure is capable of reducing parasitic current through the wafer and hence increasing the power conversion efficiency of a voltage step-up circuit.
Abstract(Chinese):

金属氧化物半导体（MOS）晶片上的三个二极管结构。 每个二极管结构能够减小通过晶片的寄生电流，从而提高升压电路的功率转换效率。

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