发明授权
- 专利标题: Method for manufacturing a titanium nitride thin film
- 专利标题(中): 氮化钛薄膜的制造方法
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申请号: US09453889申请日: 2000-03-03
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公开(公告)号: US06468604B1公开(公告)日: 2002-10-22
- 发明人: Ryoki Tobe , Hiroshi Doi , Atsushi Sekiguchi
- 申请人: Ryoki Tobe , Hiroshi Doi , Atsushi Sekiguchi
- 优先权: JP11-072640 19990317
- 主分类号: C23C800
- IPC分类号: C23C800
摘要:
A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0
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