发明授权
US06476485B1 Thin-film structure having reliably removable oxide layer formed on bump exposed at surface of insulating layer and manufacturing method therefor
失效
在绝缘层的表面露出的突起上形成具有可靠除去的氧化物层的薄膜结构及其制造方法
- 专利标题： Thin-film structure having reliably removable oxide layer formed on bump exposed at surface of insulating layer and manufacturing method therefor
- 专利标题（中）： 在绝缘层的表面露出的突起上形成具有可靠除去的氧化物层的薄膜结构及其制造方法
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申请号： US09569155申请日： 2000-05-11
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公开(公告)号： US06476485B1公开(公告)日： 2002-11-05
- 发明人: Kiyoshi Sato
- 申请人： Kiyoshi Sato
- 优先权： JP11-132602 19990513
- 主分类号： H01L2982
- IPC分类号： H01L2982
摘要：
In a thin-film structure, since a flat face of a bump, which is exposed at the surface of an insulating layer and is to be in contact with an electrode layer, is an exposed surface of a nickel layer, an oxide layer on the flat face can be reliably removed by using ion-milling or sputter etching.
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