发明授权
US06477092B2 Level shifter of nonvolatile semiconductor memory 失效
非易失性半导体存储器的电平移位器

  • 专利标题: Level shifter of nonvolatile semiconductor memory
  • 专利标题(中): 非易失性半导体存储器的电平移位器
  • 申请号: US09842693
    申请日: 2001-04-27
  • 公开(公告)号: US06477092B2
    公开(公告)日: 2002-11-05
  • 发明人: Yoshinori Takano
  • 申请人: Yoshinori Takano
  • 优先权: JP2000-131388 20000428
  • 主分类号: G11C700
  • IPC分类号: G11C700
Level shifter of nonvolatile semiconductor memory
摘要:
A first level shifter outputs one of a first potential and a second potential lower than the first potential from an output terminal in accordance with the level of an input signal. A second level shifter outputs one of the first potential and a third potential lower than the second potential from an output terminal in accordance with the output potential from the first level shifter. A third level shifter outputs one of the first and second potentials from an output terminal in accordance with the level of the input signal. A first switching circuit selects the output voltage from the second level shifter when a high-speed operation is required such as in a read operation.
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