发明授权
- 专利标题: Level shifter of nonvolatile semiconductor memory
- 专利标题(中): 非易失性半导体存储器的电平移位器
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申请号: US09842693申请日: 2001-04-27
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公开(公告)号: US06477092B2公开(公告)日: 2002-11-05
- 发明人: Yoshinori Takano
- 申请人: Yoshinori Takano
- 优先权: JP2000-131388 20000428
- 主分类号: G11C700
- IPC分类号: G11C700
摘要:
A first level shifter outputs one of a first potential and a second potential lower than the first potential from an output terminal in accordance with the level of an input signal. A second level shifter outputs one of the first potential and a third potential lower than the second potential from an output terminal in accordance with the output potential from the first level shifter. A third level shifter outputs one of the first and second potentials from an output terminal in accordance with the level of the input signal. A first switching circuit selects the output voltage from the second level shifter when a high-speed operation is required such as in a read operation.
公开/授权文献
- US20010036108A1 Level shifter of nonvolatile semiconductor memory 公开/授权日:2001-11-01
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