发明授权
US06479324B2 Method and manufacturing piezoelectric device 有权
方法制造压电器件

  • 专利标题: Method and manufacturing piezoelectric device
  • 专利标题(中): 方法制造压电器件
  • 申请号: US09917994
    申请日: 2001-07-30
  • 公开(公告)号: US06479324B2
    公开(公告)日: 2002-11-12
  • 发明人: Kenji Sakaguchi
  • 申请人: Kenji Sakaguchi
  • 优先权: JP2000-245802 20000814
  • 主分类号: H01L2144
  • IPC分类号: H01L2144
Method and manufacturing piezoelectric device
摘要:
A method for efficiently and inexpensively manufacturing a piezoelectric element that contains highly corrosion resistant electrodes and has excellent and stable electric characteristics is performing such that dicing occurs without forming any protective film beforehand. According to the method, a wafer is formed to have an electrode including an Al alloy disposed on a piezoelectric substrate made of a piezoelectric material. The wafer is cut while being exposed to plasma using a halogen-containing gas while cooling the wafer with cutting water. The cutting water preferably includes a compound that reacts with Al to form a protective film on a surface of an electrode including an Al alloy.
公开/授权文献
信息查询
0/0