发明授权
- 专利标题： Semiconductor device with self-aligned contact structure
- 专利标题（中）： 具有自对准接触结构的半导体器件
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申请号： US09444848申请日： 1999-11-22
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公开(公告)号： US06479873B1公开(公告)日： 2002-11-12
- 发明人: Kenji Yoshiyama , Keiichi Higashitani
- 申请人： Kenji Yoshiyama , Keiichi Higashitani
- 优先权： JP11-163929 19990610
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A semiconductor device more reduced in size and a manufacturing method thereof are provided. A gate electrode is covered with a silicon nitride film having a selecting ratio greater than an NSG film under a prescribed etching condition. A cobalt suicide film is formed on an upper surface of source/drain regions. Furthermore, a refractory metal silicide film forming the gate electrode is formed by a cobalt silicide film.