发明授权
- 专利标题： COPPER WIRING STRUCTURE COMPRISING A COPPER MATERIAL BURIED IN A HOLLOW OF AN INSULATING FILM AND A CARBON LAYER BETWEEN THE HOLLOW AND THE COPPER MATERIAL IN SEMICONDUCTOR DEVICE AND METHOD FABRICATING THE SAME
- 专利标题（中）： 铜箔结构包含在半导体器件中的中空和铜材料之间的绝缘膜和碳层中的铜层的铜层及其制造方法
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申请号： US09377717申请日： 1999-08-20
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公开(公告)号： US06482741B1公开(公告)日： 2002-11-19
- 发明人: Kazuyoshi Ueno
- 申请人： Kazuyoshi Ueno
- 优先权： JP9-168813 19970625
- 主分类号： H01L244
- IPC分类号： H01L244
摘要：
The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a method for fabricating the same, wherein an electroconductive carbon layer is formed between the copper material—a copper wiring of a wiring structure in grooves in which the copper material is buried into a wiring groove or holes formed in the organic interlayer film mainly composed of carbon—and the organic interlayer film. This electroconductive carbon layer is formed, after forming wiring grooves or holes in the desired region of the organic interlayer film, by a modification of the inner wall of wiring grooves or holes by plasma irradiation. The copper wiring of the wiring structure in grooves as described above is formed by depositing copper on the electroconductive carbon layer.