发明授权
- 专利标题： Side-illuminated type semiconductor photodetector device and method of manufacturing the same
- 专利标题（中）： 侧照式半导体光电检测器及其制造方法
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申请号： US09447437申请日： 1999-11-23
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公开(公告)号： US06483098B1公开(公告)日： 2002-11-19
- 发明人: Masanobu Kato , Ryozo Furukawa
- 申请人： Masanobu Kato , Ryozo Furukawa
- 优先权： JP10-351580 19981210
- 主分类号： H01L3100
- IPC分类号： H01L3100
摘要：
In a semiconductor photodetector device having a slanting surface, an insulating film is formed over the slating surface as a reflective film under the condition that light is all reflected. Thus, a semiconductor device can be implemented which is high in sensibility and excellent in adhesion.
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