发明授权
US06484054B2 Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices
有权
具有用于可植入医疗器件的反向偏置二极管的深沟槽半导体电容器
- 专利标题: Deep trench semiconductor capacitors having reverse bias diodes for implantable medical devices
- 专利标题(中): 具有用于可植入医疗器件的反向偏置二极管的深沟槽半导体电容器
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申请号: US09879282申请日: 2001-06-12
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公开(公告)号: US06484054B2公开(公告)日: 2002-11-19
- 发明人: Koen J. Weijand , Richard Houben
- 申请人: Koen J. Weijand , Richard Houben
- 主分类号: A61N100
- IPC分类号: A61N100
摘要:
Floating and non-floating on-chip capacitors are formed by vertical walls and/or large aspect ratio deep trenches disposed in semiconductor material. By optimizing the through spacing and substrate voltage, a very small parasitic to intended capacitance ratio may be obtained. Capacitors so formed may be used as on-chip charge storage and other types of on-chip capacitors, and eliminate or reduce the number of off-chip capacitors that would otherwise be required. The deep trench capacitors find particularly efficacious application in implantable medical devices where volume, cost and electrical energy consumption must be minimized, and preferably have capacitances which range between about 10 nF and about 1000 uF.