Methods are disclosed for manufacturing masks (reticles) as used in charged-particle-beam (CPB) microlithography. The methods can include inspecting the masks for defects, and repairing the defects. First, a “parent” mask is prepared from circuit-design data. The resulting pattern elements on the parent mask are inspected and compared with the circuit-design data to determine whether the data have been converted accurately into corresponding pattern elements on the parent mask. This inspection can be performed using an optical microscope. Detected mismatches and defects are corrected as required. The parent mask is used as a microlithography mask in the preparation, by “reduction” optical microlithography, a “progeny” mask. The pattern defined by the progeny mask is imaged and the image is digitized for comparison with a digitized image of the parent mask. The digitized images are compared using a computer. Any detected repairable defects are repaired, thereby completing fabrication of the CPB microlithography mask.