发明授权
US06486001B1 Fabricating method of semiconductor device 失效
半导体器件的制造方法

  • 专利标题: Fabricating method of semiconductor device
  • 专利标题(中): 半导体器件的制造方法
  • 申请号: US09522169
    申请日: 2000-03-09
  • 公开(公告)号: US06486001B1
    公开(公告)日: 2002-11-26
  • 发明人: Yumiko OhshimaNaoko Yamaguchi
  • 申请人: Yumiko OhshimaNaoko Yamaguchi
  • 优先权: JPP11-063367 19990310
  • 主分类号: H01L2144
  • IPC分类号: H01L2144
Fabricating method of semiconductor device
摘要:
According to a fabricating method of the present invention, a cap shaped cover plate having a concaved portion on the inner surface is mounted on the rear surface of a semiconductor chip. After solder bumps are formed on a connecting pad of a wiring substrate, a fluid resin layer is formed on the bump formed surface. Thereafter, the semiconductor chip with the cover plate adhered is mounted with a face down on the resin layer formed surface of the wiring substrate. The solder bumps on the chip side and the solder bumps on the substrate side are contacted. At that time, the peripheral portion of the cover plate is contacted and adhered to the wiring substrate. Thereafter, while the bumps on the chip side and the bumps on the substrate side are being heated, melted, and connected, the fluid resin layer on the wiring substrate is hardened. Thus, the space between the semiconductor chip and the wiring substrate (namely, the height of the bumps) is controlled to a predetermined value. As a result, a semiconductor device having a flip-chip bonded portion with high reliability can be fabricated with simplified steps and high yield.
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