发明授权
US06486043B1 Method of forming dislocation filter in merged SOI and non-SOI chips
失效
在合并SOI和非SOI芯片中形成位错滤波器的方法
- 专利标题： Method of forming dislocation filter in merged SOI and non-SOI chips
- 专利标题（中）： 在合并SOI和非SOI芯片中形成位错滤波器的方法
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申请号： US09652711申请日： 2000-08-31
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公开(公告)号： US06486043B1公开(公告)日： 2002-11-26
- 发明人: Robert Hannon , Herbert L. Ho , Subramanian Iyer , S. Sundar Kumar Iyer
- 申请人： Robert Hannon , Herbert L. Ho , Subramanian Iyer , S. Sundar Kumar Iyer
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A method for forming a semiconductor devices structure includes providing a semiconductor substrate, forming a deep trench continuously in the substrate to separate a first region from a second region, and then forming a silicon-on-insulator region in the first region while maintaining a non-silicon-on-insulator region in the second region. The deep trench has a depth which is at least as deep as the depth of the buried oxide in the substrate. The invention also includes a device structure resulting from the method.