发明授权
- 专利标题: CVD plasma assisted lower dielectric constant sicoh film
- 专利标题(中): CVD等离子体辅助低介电常数薄膜
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申请号: US09885985申请日: 2001-06-18
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公开(公告)号: US06486082B1公开(公告)日: 2002-11-26
- 发明人: Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
- 申请人: Seon-Mee Cho , Peter Wai-Man Lee , Chi-I Lang , Dian Sugiarto , Chen-An Chen , Li-Qun Xia , Shankar Venkataraman , Ellie Yieh
- 主分类号: H07L21477
- IPC分类号: H07L21477
摘要:
A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
公开/授权文献
- US20030003768A1 CVD PLASMA ASSISTED LOWER DIELECTRIC CONSTANT SICOH FILM 公开/授权日:2003-01-02