- 专利标题: Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor
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申请号: US09871926申请日: 2001-06-01
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公开(公告)号: US06489207B2公开(公告)日: 2002-12-03
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
The present invention relates to a method of forming a very shallow source-drain (S/D) extension while simultaneously highly doping a very narrow polysilicon gate through to the gate dielectric interface. The invention also relates to the resulting semiconductor.