Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor

发明授权

US06489207B2 Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor 失效

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专利标题： Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor
申请号： US09871926

申请日： 2001-06-01
公开(公告)号： US06489207B2

公开(公告)日： 2002-12-03
发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
申请人： Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak
主分类号： H01L21336
IPC分类号： H01L21336

Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor

摘要：

The present invention relates to a method of forming a very shallow source-drain (S/D) extension while simultaneously highly doping a very narrow polysilicon gate through to the gate dielectric interface. The invention also relates to the resulting semiconductor.

公开/授权文献

US20020022354A1 Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor 公开/授权日：2002-02-21

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