An integrated semiconducting device comprises a semiconducting substrate, a plurality of grounding strips disposed above the substrate in a lower metal level of the semiconducting device, an inductor positioned in an upper metal level of the semiconducting device, and a plurality of conducting vias connected to and extending away from the grounding strips towards the inductor. The inductor, conducting via, ground strips structure forms a Faraday cage that acts as a shield against electromagnetic radiation. The number and placement of the conductive vias are adjustable and can be optimized based on the relative importance of maximizing the quality factor Q of the inductor or minimizing the capacitance between the inductor and ground.