Invention Grant
US06492256B2 Method for forming an interconnect structure with air gap compatible with unlanded vias
有权
用于形成具有与未通孔的空隙兼容的互连结构的方法
- Patent Title: Method for forming an interconnect structure with air gap compatible with unlanded vias
- Patent Title (中): 用于形成具有与未通孔的空隙兼容的互连结构的方法
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Application No.: US10098718Application Date: 2002-03-15
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Publication No.: US06492256B2Publication Date: 2002-12-10
- Inventor: Ellis Lee , Shih-Wei Sun
- Applicant: Ellis Lee , Shih-Wei Sun
- Main IPC: H01L214763
- IPC: H01L214763

Abstract:
An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure. The opening may also expose a top portion of a sidewall of the conductive structure if a misalignment occurs, but the opening does not expose the air gap due to protection from the predetermined distance of the capping layer within the air gap. A next level of conductive structure can be formed to fill the opening. A liner layer can be also formed on a sidewall of the substructure interfacing the air gap, so as to protect the conductive structure.
Public/Granted literature
- US20020163082A1 METHOD FOR FORMING AN INTERCONNECT STRUCTURE WITH AIR GAP COMPATIBLE WITH UNLANDED VIAS Public/Granted day:2002-11-07
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