Invention Grant
US06492256B2 Method for forming an interconnect structure with air gap compatible with unlanded vias 有权
用于形成具有与未通孔的空隙兼容的互连结构的方法

  • Patent Title: Method for forming an interconnect structure with air gap compatible with unlanded vias
  • Patent Title (中): 用于形成具有与未通孔的空隙兼容的互连结构的方法
  • Application No.: US10098718
    Application Date: 2002-03-15
  • Publication No.: US06492256B2
    Publication Date: 2002-12-10
  • Inventor: Ellis LeeShih-Wei Sun
  • Applicant: Ellis LeeShih-Wei Sun
  • Main IPC: H01L214763
  • IPC: H01L214763
Method for forming an interconnect structure with air gap compatible with unlanded vias
Abstract:
An interconnect structure has a substrate having devices already formed thereon. A dielectric layer covers over the substrate. A conductive structure having at least two substructure separated by an air gap is formed on the dielectric layer. A capping layer covers the conductive structure and the air gap. The capping layer at a portion above the air gap also fills into the air gap by a predetermined distance. The air gap may also extend into the dielectric layer to have a greater height. An etching stop layer is formed on the capping layer. An inter-metal dielectric layer is formed on the etching stop layer. The inter-metal dielectric layer, the etching stop layer and the capping layer are patterned to form an opening that exposes a top surface of the conductive structure. The opening may also expose a top portion of a sidewall of the conductive structure if a misalignment occurs, but the opening does not expose the air gap due to protection from the predetermined distance of the capping layer within the air gap. A next level of conductive structure can be formed to fill the opening. A liner layer can be also formed on a sidewall of the substructure interfacing the air gap, so as to protect the conductive structure.
Information query
Patent Agency Ranking
0/0