Invention Grant
- Patent Title: Bi-layer lift-off process for high track density GMR head
- Patent Title (中): 高轨道密度GMR头的双层剥离工艺
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Application No.: US09835023Application Date: 2001-04-16
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Publication No.: US06493926B2Publication Date: 2002-12-17
- Inventor: Cherng-Chyi Han , Rodney Lee , Mao-Min Chen , Pokang Wang
- Applicant: Cherng-Chyi Han , Rodney Lee , Mao-Min Chen , Pokang Wang
- Main IPC: G11B5127
- IPC: G11B5127

Abstract:
A method for forming a bi-layer lift-off mask for use in fabricating an abutted junction type GMR read-head sensor with a narrow trackwidth of less than 0.5 microns. The mask has a novel suspension bridge structure that avoids problems associated with bilayer lift-off masks of the prior art, namely insufficient or excessive undercutting of the lower layer that produces fence formations in the conducting lead layer or collapse of the mask structure rendering removal difficult.
Public/Granted literature
- US20020148105A1 Novel bi-layer lift-off process for high track density GMR head Public/Granted day:2002-10-17
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