发明授权
- 专利标题: Dielectric structure and method of formation
- 专利标题(中): 介电结构和形成方法
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申请号: US09458291申请日: 1999-12-10
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公开(公告)号: US06495239B1公开(公告)日: 2002-12-17
- 发明人: Anilkumar C. Bhatt , Stephen J. Fuerniss , Roy H. Magnuson , Voya R. Markovich
- 申请人: Anilkumar C. Bhatt , Stephen J. Fuerniss , Roy H. Magnuson , Voya R. Markovich
- 主分类号: B32B310
- IPC分类号: B32B310
摘要:
A dielectric structure, wherein two fully cured photoimageable dielectric (PID) layers of the structure are nonadhesively interfaced by a partially cured PID layer. The partially cured PID layer includes a power plane sandwiched between a first partially cured PID sheet and a second partially cured PID sheet. The fully cured PID layers each include an internal power plane, a plated via having a blind end conductively coupled to the internal power plane, and a plated via passing through the fully cured PID layer. The dielectric structure may further include a first PID film partially cured and nonadhesively coupled to one of the fully cured PID layers. The dialectric structure may further include a second PID film partially cured and nonadhesively coupled to the other fully cured PID layer.