Invention Grant
- Patent Title: Method to prevent an ITO from opening
- Patent Title (中): 防止ITO打开的方法
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Application No.: US09846300Application Date: 2001-05-02
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Publication No.: US06495440B2Publication Date: 2002-12-17
- Inventor: Tean-Sen Jen , Ming-Tien Lin
- Applicant: Tean-Sen Jen , Ming-Tien Lin
- Priority: TW90102871A 20010209
- Main IPC: H01L2144
- IPC: H01L2144

Abstract:
The present invention provides a method to prevent an ITO from opening. A dummy material layer with tapered edges is formed on a substrate. A first insulating layer is formed on the dummy material layer. Then a metal layer is formed on the first insulating layer, wherein one edge of the metal layer corresponds to any part of one of the tapered edges of the dummy material layer and the other tapered edge is situated away from the metal layer. After a second insulating layer is formed on the metal layer, an ITO layer is formed thereon without opening.
Public/Granted literature
- US20020110961A1 Method to prevent an ITO from opening Public/Granted day:2002-08-15
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