- 专利标题： Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
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申请号： US09854925申请日： 2001-05-14
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公开(公告)号： US06495894B2公开(公告)日： 2002-12-17
- 发明人: Tomohiko Shibata , Keiichiro Asai , Teruyo Nagai , Mitsuhiro Tanaka
- 申请人： Tomohiko Shibata , Keiichiro Asai , Teruyo Nagai , Mitsuhiro Tanaka
- 优先权： JP2000-149190 20000522; JP2000-149191 20000522; JP2000-293763 20000927; JP2000-293846 20000927; JP2001-114065 20010412; JP2001-114067 20010412
- 主分类号： H01L3300
- IPC分类号： H01L3300
摘要：
A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
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