发明授权
- 专利标题: Ultra-late programming ROM and method of manufacture
- 专利标题(中): 超长编程ROM和制造方法
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申请号: US10006273申请日: 2001-12-04
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公开(公告)号: US06498066B2公开(公告)日: 2002-12-24
- 发明人: Patrice Parris , Bruce L. Morton , Walter J. Ciosek , Mark Aurora , Robert Smith
- 申请人: Patrice Parris , Bruce L. Morton , Walter J. Ciosek , Mark Aurora , Robert Smith
- 主分类号: H01L218236
- IPC分类号: H01L218236
摘要:
A ROM embedded in a multi-layered integrated circuit includes rows of transistor memory cells. For reduced area, each transistor in a row optionally shares a terminal with an adjacent transistor in the row, whereby adjacent transistors share one of a source and a drain. A plurality of contact lines one each connected to each common terminal, serve as address terminals for cells. A plurality of metal layers are connected to the other of the drain or source terminals by filled vias and include a final metal layer defining a metal pad for each of the other terminals. Filled vias couple selected metal pads to selected signal lines to provide “1” outputs from selected cells and signal lines which are not coupled by filled vias to the metal pads provide “0” outputs from selected cells.
公开/授权文献
- US20020042182A1 Ultra-late programming ROM and method of manufacture 公开/授权日:2002-04-11
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