Invention Grant
US06498083B2 Process for manufacturing non-volatile memory cells integrated on a semiconductor substrate
有权
用于制造集成在半导体衬底上的非易失性存储单元的工艺
- Patent Title: Process for manufacturing non-volatile memory cells integrated on a semiconductor substrate
- Patent Title (中): 用于制造集成在半导体衬底上的非易失性存储单元的工艺
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Application No.: US09750449Application Date: 2000-12-28
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Publication No.: US06498083B2Publication Date: 2002-12-24
- Inventor: Nicola Nastasi , Dorotea Arcidiacono , Stefano Mazzali
- Applicant: Nicola Nastasi , Dorotea Arcidiacono , Stefano Mazzali
- Priority: EP99830828 19991231
- Main IPC: H01L214763
- IPC: H01L214763

Abstract:
A method is provided for manufacturing electronic non-volatile memory devices on a semiconductor substrate including a matrix of memory cells having floating gate regions formed on respective active areas and an oxide layer separating the active areas. The method may include forming sidewalls of the floating gate regions that are slanted with respect to a surface of the semiconductor substrate, forming a trench in the oxide layer following the formation of the floating gate regions, and forming a plug of polycrystalline silicon in the trench. The slanted sidewalls of the floating gate regions provide a leading for the formation of upper layers.
Public/Granted literature
- US20010016379A1 Process for manufacturing non-volatile memory cells integrated on a semiconductor substrate Public/Granted day:2001-08-23
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