发明授权
- 专利标题： Reverse level shift circuit and power semiconductor device
- 专利标题（中）： 反向电平移位电路和功率半导体器件
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申请号： US10118252申请日： 2002-04-09
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公开(公告)号： US06498738B1公开(公告)日： 2002-12-24
- 发明人: Shoichi Orita , Yoshikazu Tanaka
- 申请人： Shoichi Orita , Yoshikazu Tanaka
- 优先权： JP2001-212022 20010712
- 主分类号： H02M324
- IPC分类号： H02M324
摘要：
A reverse level shift circuit that is low in cost and excellent in reliability is provided by employing no Pch-DMOS transistor and forming it together with a level shift circuit on one semiconductor substrate. An input voltage signal (VIN) on high side is converted to a current signal by a voltage-current conversion circuit (CV1) and a current source (CS1). Using a Nch-DMOS transistor (ND1) of common gate construction as a high breakdown voltage resistance, the current signal is then transferred to low side, on which the current signal is converted to a voltage signal by a current source (CS2) and a current-voltage conversion circuit (CV2). Thereby, the signal change of the signal (VIN) using potential (HGND) as a reference potential can be outputted as a signal change of signal (VOUT) that uses potential (GND) as a reference potential.