A sense amplifier for nonvolatile memories includes a first line path (precharging path) having a first transistor and a third transistor connected in series with the bit line for a memory cell that is to be read. The sense amplifier also includes a second line path (reading path), running parallel to the first line path, in which a transistor diode and a fourth transistor are connected in series with the bit line. The gates of the third transistor and of the fourth transistor are at the same potential, in particular, are connected to one another.