发明授权
US06500263B2 Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels
有权
半导体衬底处理室具有可互换的盖子，致动多个气体互锁水平
- 专利标题： Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels
- 专利标题（中）： 半导体衬底处理室具有可互换的盖子，致动多个气体互锁水平
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申请号： US09817786申请日： 2001-03-26
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公开(公告)号： US06500263B2公开(公告)日： 2002-12-31
- 发明人: Yu Chang , Wen Xiao Chen , Gwo-Chuan Tzu
- 申请人： Yu Chang , Wen Xiao Chen , Gwo-Chuan Tzu
- 主分类号： C23C16000
- IPC分类号： C23C16000
摘要：
Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.