发明授权
- 专利标题: Method of producing a thin-film photovoltaic device
- 专利标题(中): 制造薄膜光伏器件的方法
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申请号: US09536092申请日: 2000-03-24
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公开(公告)号: US06500690B1公开(公告)日: 2002-12-31
- 发明人: Hideo Yamagishi , Hitoshi Nishio , Takayuki Suzuki
- 申请人: Hideo Yamagishi , Hitoshi Nishio , Takayuki Suzuki
- 优先权: JP11-305532 19991027; JP11-330136 19991119; JP2000-016940 20000126
- 主分类号: H01L3104
- IPC分类号: H01L3104
摘要:
A method is provided for producing a thin-film photovoltaic device which has a rear electrode including a transparent conductive rear layer and a light-reflective metallic layer. In forming the light-reflective metallic layer, a first plasma region including fine particles of zinc oxide and a second plasma region including fine particles of silver are formed in a chamber at a sputtering gas pressure of about 0.1 to about 0.27 Pa. Then, the substrate is passed over the first and second plasma regions formed in the chamber to form a bonding layer comprising the zinc oxide and a light-reflective metallic layer comprising the silver, thereby providing the rear electrode having the transparent conductive rear layer, the bonding layer and the light-reflective metallic layer.