The present invention discloses a method for manufacturing thin film transistor liquid crystal display including the following steps so as to form simultaneously a via hole for contacting a drain electrode and a pixel electrode mutually and the channel of thin film transistor: forming sequentially gate insulation layer, amorphous silicon layer for channel and doped semiconductor layer for ohmic contact, and metal layer for source/drain electrode on the back substrate where the gate electrode and the storage capacitor electrode have been formed; patterning the metal layer for source/drain electrode and the doped semiconductor layer for ohmic contact through a second photolithograph process so that the source electrode, the drain electrode, and the ohmic contacts thereof may be formed; forming a passivation layer on the back substrate where the source electrode and the drain electrode have been formed; patterning the passivation layer, the amorphous silicon layer for channel, and the gate insulation layer through a third photolithograph process so that a part of the drain electrode and the back substrate portion between the storage capacitor electrode and the thin film transistor may be exposed.