发明授权
- 专利标题： Light emitting diode
- 专利标题（中）： 发光二极管
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申请号： US09883367申请日： 2001-06-19
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公开(公告)号： US06501101B2公开(公告)日： 2002-12-31
- 发明人: Tetsurou Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
- 申请人： Tetsurou Murakami , Takahisa Kurahashi , Shouichi Ohyama , Hiroshi Nakatsu
- 优先权： JP2000-267086 20000904; JP2001-126110 20010424
- 主分类号： H01L3112
- IPC分类号： H01L3112
摘要：
A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows an external quantum efficiency higher than that of an MQW layer including a single well layer.
公开/授权文献
- US20020050590A1 Light emitting diode 公开/授权日：2002-05-02
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