发明授权
US06501159B2 Power transistor module, power amplifier and method in the fabrication thereof 失效
功率晶体管模块,功率放大器及其制造方法

  • 专利标题: Power transistor module, power amplifier and method in the fabrication thereof
  • 专利标题(中): 功率晶体管模块,功率放大器及其制造方法
  • 申请号: US09735533
    申请日: 2000-12-14
  • 公开(公告)号: US06501159B2
    公开(公告)日: 2002-12-31
  • 发明人: Lars-Anders OlofssonBengt Ahl
  • 申请人: Lars-Anders OlofssonBengt Ahl
  • 优先权: SE9904594 19991215
  • 主分类号: H01L23495
  • IPC分类号: H01L23495
Power transistor module, power amplifier and method in the fabrication thereof
摘要:
The present invention relates to a power transistor module for radio frequency applications, particularly for use in an amplifier stage in a radio base station or in a ground transmitter for TV or radio, wherein said power transistor module comprises a support plate, a power transistor chip arranged thereon, outer electrical connections projecting from the module for external connection and inner electrical connections connected between said transistor chip and said outer connections, at least one of said inner electrical connections comprising a first conductor pattern arranged on a flexible foil. The invention further comprises a power amplifier comprising said module, a method in the fabrication of said module, a method in the fabrication of a power amplifier, where said module is electrically connected to a circuit board mounted at a heat sink and to be mounted at said heat sink, and finally to a power amplifier manufactured according to the method.
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